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EX-L291-P-J-Y｜放大器內藏・超小型雷射感測器 EX-L200

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※ 實際商品可能與照片不同。

適合不含有規定:EU RoHS指令 2011/65/EU的6物質、以及EU RoHS指令2015/863/EU的4物質

品名

EX-L291-P-J-Y

型號

EX-L291-P-J-Y

產品

Amplifier Built-in Ultra-compact Laser Sensor

詳細

Retroreflective type

商品名稱

 放大器內藏・超小型雷射感測器 EX-L200

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詳細規格

為了商品改進，規格和外觀可能會在不事先通知的情況下變更，敬請諒解。
項目內容
品名EX-L291-P-J-Y
型號EX-L291-P-J-Y
產品名Amplifier Built-in Ultra-compact Laser Sensor
顯示價格Please contact our office
Regulatory complianceEMC Directive, RoHS Directive
Sensing range4 m 13.123 ft
(Note)The sensing range is specified for white non-glossy papar (100 x 100 mm 3.937 x 3.937 in) as the object.
Emission spot size (Typical)Approx. 6 × 4 mm 0.236 × 0.157 in (vertical x horizontal)
(at a sensing distance of 1 m)
(Note) In the case sensing distance is 4 m 13.123 ft, the emission spot size is H 18 x W 10 mm H 0.709 x W 0.394 in (visual reference value).
Sensing objectOpaque translucent object of ø25 mm ø0.984 in or more
Minimum sensing object (Typical)-
Hysteresis20 % or less of operation distance
RepeatabilityPerpendicular to sensing axis: 0.2 mm 0.0080 in or less
Repeatability (Typical)(perpendicular to sensing axis)-
Supply voltage12 to 24 V DC plus or minus 10 % Ripple P-P 10 % or less
Current consumption15 mA or less
OutputPNP open-collector transistor
- Maximum source current: 50 mA
- Applied voltage: 26.4 V DC or less (between output and +V)
- Residual voltage: 2 V or less (at 50 mA source current), 1 V or less (at 16 mA source current)
Output:Output operationLight-ON / Dark-ON selectable by the output operation switching input
Output:Short-circuit protectionIncorporated (short-circuit protection / inverse polarity protection)
Response time0.5 ms or less
Automatic Interference prevention functionIncorporated
(Two sensors can be mounted close together.)
Sensitivity adjusterContinuously variable adjuster
ProtectionIP67 (IEC)
Ambient temperature-10 to +55 ℃ +14 to +131 ℉ (No dew condensation or no icing condition),
Storage: -30 to +70 ℃ -22 to +158 ℉
Ambient humidity35 to 85 % RH, Storage: 35 to 85 % RH
Ambient illuminanceIncandescent light: 3,000 lx or less at the light-receiving face
Voltage withstandability1,000 V AC for one min. between all supply terminals connected together and enclosure
Insulation resistance20 MOhm , or more, with 250 V DC megger between all supply terminals connected together and enclosure
Vibration resistance10 to 500 Hz frequency, 1.5 mm 0.059 in double amplitude (10 G max.) in X, Y and Z directions for two hours each
Shock resistance500 m/s2 acceleration (50 G approx.) in X, Y and Z directions three times each
Emitting elementRed semiconductor laser Class 1 (IEC / JIS/ FDA/ GB) (Note：This product complies with 21 CFR 1040.10 and 1040.11 Laser Notice No. 56, dated May 8, 2019, issued by CDRH
(Center for Devices and Radiological Health) under the FDA (Food and Drug Administration)
(Maximum output: 0.5 mW, Peak emission wavelength: 655 nm 0.026 mil)
MaterialEnclosure: Polybutylene terephthalate, Front cover: Acylic, Lens: Glass, Indicator part: Polyarylate

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