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Panasonic Industry ／ 制御機器

EX-L291-P-C5-Y｜放大器內藏・超小型雷射感測器 EX-L200

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※ 實際商品可能與照片不同。

適合不含有規定:EU RoHS指令 2011/65/EU的6物質、以及EU RoHS指令2015/863/EU的4物質

品名

EX-L291-P-C5-Y

型號

EX-L291-P-C5-Y

產品

Amplifier Built-in Ultra-compact Laser Sensor

詳細

Retroreflective type

商品名稱

 放大器內藏・超小型雷射感測器 EX-L200

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※為了商品改進，規格和外觀可能會在不事先通知的情況下變更，敬請諒解。

詳細規格

為了商品改進，規格和外觀可能會在不事先通知的情況下變更，敬請諒解。
項目內容
品名EX-L291-P-C5-Y
型號EX-L291-P-C5-Y
產品名Amplifier Built-in Ultra-compact Laser Sensor
顯示價格Please contact our office
Applicable regulations and certificationsCE Marking (EMC Directive, RoHS Directive), UKCA Marking (EMC Regulations, RoHS Regulations), FDA Regulations, Chinese Standard GB 7247.1
Sensing range4 m 13.123 ft
(Note)The sensing range is the value for RF-330 reflector. The sensing range represents the actual sensing range of the sensor.
Emission spot size (Typical)Approx. 6 × 4 mm 0.236 × 0.157 in (vertical x horizontal)
(at a sensing distance of 1 m)
(Note) In the case sensing distance is 4 m 13.123 ft, the emission spot size is H 18 x W 10 mm H 0.709 x W 0.394 in (visual reference value).
Sensing objectOpaque translucent object of ø25 mm ø0.984 in or more
Minimum sensing object (Typical)-
Hysteresis20 % or less of operation distance
RepeatabilityPerpendicular to sensing axis: 0.2 mm 0.0080 in or less
Repeatability (Typical)(perpendicular to sensing axis)-
Supply voltage12 to 24 V DC plus or minus 10 % Ripple P-P 10 % or less
Current consumption15 mA or less
OutputPNP open-collector transistor
- Maximum source current: 50 mA
- Applied voltage: 26.4 V DC or less (between output and +V)
- Residual voltage: 2 V or less (at 50 mA source current), 1 V or less (at 16 mA source current)
Output:Output operationLight-ON / Dark-ON selectable by the output operation switching input
Output:Short-circuit protectionIncorporated (short-circuit protection / inverse polarity protection)
Response time0.5 ms or less
Automatic Interference prevention functionIncorporated
(Two sensors can be mounted close together.)
Sensitivity adjusterContinuously variable adjuster
ProtectionIP67 (IEC)
Ambient temperature-10 to +55 ℃ +14 to +131 ℉ (No dew condensation or no icing condition),
Storage: -30 to +70 ℃ -22 to +158 ℉
Ambient humidity35 to 85 % RH, Storage: 35 to 85 % RH
Ambient illuminanceIncandescent light: 3,000 lx or less at the light-receiving face
Voltage withstandability1,000 V AC for one min. between all supply terminals connected together and enclosure
Insulation resistance20 MOhm , or more, with 250 V DC megger between all supply terminals connected together and enclosure
Vibration resistance10 to 500 Hz frequency, 1.5 mm 0.059 in double amplitude (10 G max.) in X, Y and Z directions for two hours each
Shock resistance500 m/s2 acceleration (50 G approx.) in X, Y and Z directions three times each
Emitting elementRed semiconductor laser Class 1 (IEC/EN/JIS/GB/KS/FDA)
(Note ：This product complies with the FDA regulations (FDA 21 CFR 1040.10 and 1040.11) in accordance with FDA Laser Notice No. 56, except for complying with IEC 60825-1 Ed. 3.)
(Maximum output: 0.5 mW, Peak emission wavelength: 655 nm 0.026 mil)
MaterialEnclosure: Polybutylene terephthalate, Front cover: Acylic, Lens: Glass, Indicator part: Polyarylate
Cable0.15 mm2 4-core (emitter of a thru-beam type: 2-core) cabtyre cable, 2 m 6.562 ft long
Cable extensionExtension up to total 50 m 164.042 ft is possible with 0.3 mm2, or more, cable.

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