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EX-L221-P-J｜Amplifier Built-in Ultra-compact Laser Sensor EX-L200

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This product has been confirmed that it does not contain the 6 substances specified in EU RoHS Directive 2011/65/EU and the 4 substances specified in 2015/863/EU.

Product Number

EX-L221-P-J

Part Number

EX-L221-P-J

Product

Amplifier Built-in Ultra-compact Laser Sensor

Details

Spot reflective type

Product Name

 Amplifier Built-in Ultra-compact Laser Sensor EX-L200

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*Specifications and design of the products are subject to change without notice for the product improvement.

Spec Detail

Specifications and design of the products are subject to change without notice for the product improvement.
ItemSpecifications
Part NumberEX-L221-P-J
Product NumberEX-L221-P-J
Products NameAmplifier Built-in Ultra-compact Laser Sensor
Product detailsSpot reflective type
The price of the productPlease contact our office
Applicable regulationsCE Marking (EMC Directive, RoHS Directive), UKCA Marking (EMC Regulations, RoHS Regulations)
Sensing range45 to 300 mm 1.772 to 11.811 in
(Note)The sensing range is specified for white non-glossy papar (100 x 100 mm 3.937 x 3.937 in) as the object.
Emission spot size (Typical)ø1 mm ø0.039 in or less
(at a sensing distance of 300 mm)
Sensing objectø1 mm ø0.039 in or less
(at a sensing distance of 300 mm)
Minimum sensing object (Typical)Gold wire of ø0.01 mm ø0.0004 in
(Note)Typical values when the sensitivity adjuster is optimally adjusted.
Hysteresis20 % or less of operation distance
RepeatabilityPerpendicular to sensing axis: 0.05 mm 0.0020 in or less
Repeatability (Typical)(perpendicular to sensing axis)0.02 mm 0.0008 in or less
(at 100 to 200 mm sensing distance)
(Note)Typical values when the sensitivity adjuster is optimally adjusted.
Supply voltage12 to 24 V DC plus or minus 10 % Ripple P-P 10 % or less
Current consumption15 mA or less
OutputPNP open-collector transistor
- Maximum source current: 50 mA
- Applied voltage: 26.4 V DC or less (between output and +V)
- Residual voltage: 2 V or less (at 50 mA source current), 1 V or less (at 16 mA source current)
Output:Output operationLight-ON / Dark-ON selectable by the output operation switching input
Output:Short-circuit protectionIncorporated (short-circuit protection / inverse polarity protection)
Response time0.5 ms or less
Automatic Interference prevention functionIncorporated
(Two sensors can be mounted close together.)
Sensitivity adjusterContinuously variable adjuster
ProtectionIP67 (IEC)
Ambient temperature-10 to +55 ℃ +14 to +131 ℉ (No dew condensation or no icing condition),
Storage: -30 to +70 ℃ -22 to +158 ℉
Ambient humidity35 to 85 % RH, Storage: 35 to 85 % RH
Ambient illuminanceIncandescent light: 3,000 lx or less at the light-receiving face
Voltage withstandability1,000 V AC for one min. between all supply terminals connected together and enclosure
Insulation resistance20 MOhm , or more, with 250 V DC megger between all supply terminals connected together and enclosure
Vibration resistance10 to 500 Hz frequency, 1.5 mm 0.059 in double amplitude (10 G max.) in X, Y and Z directions for two hours each
Shock resistance500 m/s2 acceleration (50 G approx.) in X, Y and Z directions three times each
Emitting elementRed semiconductor laser Class 1 (IEC / JIS/ FDA/ GB/ EN/ KS) (Note：This product complies with 21 CFR 1040.10 and 1040.11 Laser Notice No. 56, dated May 8, 2019, issued by CDRH
(Center for Devices and Radiological Health) under the FDA (Food and Drug Administration)
(Maximum output: 2 mW, Peak emission wavelength: 655 nm 0.026 mil)
MaterialEnclosure: Polybutylene terephthalate, Front cover: Acylic, Lens: Glass, Indicator part: Polyarylate
AccessoryMS-EXL2-3 (Mounting plate): 1 pc.

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