EX-L211-J|Amplifier Built-in Ultra-compact Laser Sensor EX-L200
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*Photo may vary from actual product.
This product has been confirmed that it does not contain the 6 substances specified in EU RoHS Directive 2011/65/EU and the 4 substances specified in 2015/863/EU.
Product Number | EX-L211-J |
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Part Number | EX-L211-J |
Product | Amplifier Built-in Ultra-compact Laser Sensor |
Details | Thru-beam type |
Product Name | Amplifier Built-in Ultra-compact Laser Sensor EX-L200 |
*Specifications and design of the products are subject to change without notice for the product improvement.
Spec Detail
Specifications and design of the products are subject to change without notice for the product improvement.
Item | Specifications |
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Part Number | EX-L211-J |
Product Number | EX-L211-J |
Products Name | Amplifier Built-in Ultra-compact Laser Sensor |
Product details | Thru-beam type |
The price of the product | Please contact our office |
Applicable regulations | CE Marking (EMC Directive, RoHS Directive), UKCA Marking (EMC Regulations, RoHS Regulations) |
Sensing range | 1 m 3.281 ft |
Emission spot size (Typical) | Approx. 6 × 4 mm 0.236 × 0.157 in (vertical × horizontal) (at a sensing distance of 1 m) |
Sensing object | Opaque object of ø2 mm ø0.079 in or more |
Minimum sensing object (Typical) | Opaque object of ø0.3 mm ø0.012 in (Note)Typical values when the sensitivity adjuster is optimally adjusted. |
Repeatability | Perpendicular to sensing axis: 0.05 mm 0.0020 in or less |
Repeatability (Typical)(perpendicular to sensing axis) | 0.01 mm 0.0004 in or less (all area) (Note)Typical values when the sensitivity adjuster is optimally adjusted. |
Supply voltage | 12 to 24 V DC plus or minus 10 % Ripple P-P 10 % or less |
Current consumption | Emitter: 10 mA or less Receiver: 10 mA or less |
Output | NPN open-collector transistor - Maximum sink current: 50 mA - Applied voltage: 26.4 V DC or less (between output and 0 V) - Residual voltage: 2 V or less (at 50 mA sink current), 1 V or less (at 16 mA sink current) |
Output:Output operation | Light-ON / Dark-ON selectable by the output operation switching input |
Output:Short-circuit protection | Incorporated (short-circuit protection / inverse polarity protection) |
Response time | 0.5 ms or less |
Operation indicator | Orange LED (lights up when the output is ON) (incorporated on the receiver for thru-beam type) |
Stability indicator | Green LED (lights up under stable light received condition or stable dark condition) (incorporated on the receiver for thru-beam type) |
Power indicator | Green LED (lights up when the power is ON) (incorporated on the emitter) |
Sensitivity adjuster | Continuously variable adjuster (incorporated on the receiver) |
Protection | IP67 (IEC) |
Ambient temperature | -10 to +55 ℃ +14 to +131 ℉ (No dew condensation or no icing condition), Storage: -30 to +70 ℃ -22 to +158 ℉ |
Ambient humidity | 35 to 85 % RH, Storage: 35 to 85 % RH |
Ambient illuminance | Incandescent light: 3,000 lx or less at the light-receiving face |
Voltage withstandability | 1,000 V AC for one min. between all supply terminals connected together and enclosure |
Insulation resistance | 20 MOhm , or more, with 250 V DC megger between all supply terminals connected together and enclosure |
Vibration resistance | 10 to 500 Hz frequency, 1.5 mm 0.059 in double amplitude (10 G max.) in X, Y and Z directions for two hours each |
Shock resistance | 500 m/s2 acceleration (50 G approx.) in X, Y and Z directions three times each |
Emitting element | Red semiconductor laser Class 1 (IEC / JIS/ FDA/ GB/ EN/ KS) (Note:This product complies with 21 CFR 1040.10 and 1040.11 Laser Notice No. 56, dated May 8, 2019, issued by CDRH (Center for Devices and Radiological Health) under the FDA (Food and Drug Administration) (Maximum output: 1 mW, Peak emission wavelength: 655 nm 0.026 mil) |
Material | Enclosure: Polybutylene terephthalate, Front cover: Acylic, Lens: Glass, Indicator part: Polyarylate |
Accessory | MS-EXL2-2 (Mounting plate): 2 pcs. |