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Panasonic Industry / Automation Controls

M-DW1｜Wafer Mapping Sensor M-DW1(Discontinued)

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Discontinued

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This product has been confirmed that it does not contain the 6 substances specified in EU RoHS Directive 2011/65/EU and the 4 substances specified in 2015/863/EU.

    Product Number

    M-DW1

    Part Number

    M-DW1

    Product

    Wafer Mapping Sensor

    Details

    LED beam reflective type

    Product Name

    		 Wafer Mapping Sensor M-DW1(Discontinued)
    Substitute
    Sub Prod No.
    Sub Part No.
    Remark

    Spec Detail

    ItemSpecifications
    Part NumberM-DW1
    Product NumberM-DW1
    Products NameWafer Mapping Sensor
    Product detailsLED beam reflective type
    Center sensing distance45 mm 1.772 in
    Sensing object3 inch or larger semiconductor wafer
    (Note：In case of 8 inch or less wafers, the wafer pitch, the orientation flat or surface condition may affect the sensing.)
    Detectable surfaceSurface having a side edge which reflects light in the light receiving direction
    (Note：Polished wafers, etc., which have a sharp edge cannot be detected since they do not reflect the light in the light receiving direction.)
    Sensing angle12.5 ± 5°
    (Note：Since the position of the orientation flat may vary by ±20° due to its rotation.)
    Wafer pitchSeparate sensing is possible at normal sensitivity for 3 mm 0.118 in pitch or more
    (Note:This is the pitch of an 8 inch wafer near its center region when it is inserted in an inclined fashion. When detecting a wafer having an orientation flat, the wafer pitch becomes still smaller when sensing at positions which avoid the orientation flat. In this case, the sensing signal cannot be resolved and it becomes a continuous, broad signal.)
    Suitable cassetteSEMI standard FOUP cassette / open cassette
    Supply voltage12 to 24 V DC ± 10 % Ripple P-P 10 % or less
    Current consumption65 mA or less
    OutputNPN output / PNP output, selectable with output selection switch

    NPN open-collector transistor
    - Maximum sink current: 100 mA
    - Applied voltage: 30 V DC or less (between output and 0 V)
    - Residual voltage: 1 V or less (at 100 mA sink current)
    0.4 V or less (at 16 mA sink current)

    PNP open-collector transistor
    - Maximum source current: 100 mA
    - Applied voltage: 30 V DC or less (between output and +V)
    - Residual voltage: 1 V or less (at 100 mA source current)
    0.4 V or less (at 16 mA source current)
    Output:Output operationLight-ON / Dark-ON, selectable by switch
    Output:Short-circuit protectionIncorporated (restored automatically)
    Response time500 μs or less
    Operation indicatorOrange LED (lights up when the output is ON)
    Stability indicatorGreen LED (lights up under stable light received condition or stable dark condition)
    Timer functionApprox. 2 ms fixed OFF-delay timer, switchable either effective or ineffective
    Test input (emission halt input)Signal condition
    - Emission Halt: Open, or 4 to 8 V
    - Emission: 0 to 3 V, or 9 V to +V (26.4 V max.)
    Sensitivity selection inputSignal condition
    - Input OFF: Open, or 4 to 8 V
    - Input ON: 0 to 3 V, or 9 V to +V (26.4 V max.)
    Sensitivity settingBack surface teaching: effectuated with sensor's sensitivity setting button
    Detection sensitivity selection: 4 levels with sensor's 2 bit switch or 2 levels with external input selectable
    Ambient temperature0 to +55 ℃ +32 to +131 ℉ (No dew condensation), Storage: -10 to +70 ℃ +14 to +158 ℉
    Ambient humidity35 to 85 % RH, Storage: 35 to 85 % RH
    Ambient illuminanceIncandescent light: 3,000 lx or less at the light-receiving face,
    Fluorescent light: 1,500 lx or less at the light-receiving face
    Voltage withstandability1,000 V AC for one min. between all supply terminals connected together and enclosure
    Insulation resistance20 MΩ, or more, with 250 V DC megger between all supply terminals connected together and enclosure
    Vibration resistance10 to 500 Hz frequency, 3 mm 0.118 in double amplitude in X, Y and Z directions for two hours each
    Shock resistance98 m/s2 acceleration (10 G approx) in X, Y and Z directions five times each
    Emitting elementLED (modulated)
    MaterialEnclosure: ABS and Stainless steel (SUS301), Lens: Acrylic
    Cable0.15 mm2 5-core cabtyre cable, 300 mm 11.811 in long
    Cable extensionExtension up to total 10 m 32.808 ft is possible with 0.15 mm2, or more, cable.
    WeightNet weight: 75 g approx.

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