| Wafer pitch | 6.35 mm 0.250 in | 4.76 mm 0.187 in |
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| Supply voltage | 20 to 26.4 V DC Ripple P-P 10 % or less |
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| Current consumption | 200 mA or less |
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| Sensing output | NPN open-collector transistor
- Maximum sink current: 20 mA
- Applied voltage: 30 V DC or less (between sensing output and 0 V)
- Residual voltage: 1 V or less (at 20 mA sink current) |
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| | Utilization category | DC-12 or DC-13 |
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| Number of channels | 25 channels | 26 channels | 25 channels |
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| Output operation | Dark-ON |
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| Response time | 1 ms or less |
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| Test input (emission halt) function | Incorporated |
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| Output invalid (external synchronization) function | Incorporated |
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| Pollution degree | 3 (Industrial environment) |
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| Ambient temperature | 0 to +40 ℃ +32 to +104 ℉ (No dew condensation),
Storage: -25 to +60 ℃ -13 to +140 ℉ |
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| EMC | EN 60947-5-2 |
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| Emitting element | Infrared LED (Peak emission wavelength: 870 nm 0.034 mil, modulated) |
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| Material | Sensing probe: PPS, Enclosure: ABS, Connector: PBT |
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| Weight | Net weight: 150 g approx. |
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| Accessory | Spacer: 2 pcs. |
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| Dimensions | W14 x H170 x D68.5 mm
W0.551 x H6.693 x D2.697 in | W14 x H175 x D68.5 mm
W0.551 x H6.890 x D2.697 in | W14 x H130 x D68.5 mm
W0.551 x H5.118 x D2.697 in |
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