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Panasonic Industry / Automation Controls

PM-T65-P｜Amplifier Built-in / U-shaped Micro Photoelectric Sensor [Compact / Connector built-in type] PM-65

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This product has been confirmed that it does not contain the 6 substances specified in EU RoHS Directive 2011/65/EU and the 4 substances specified in 2015/863/EU.

Product Number

PM-T65-P

Part Number

PM-T65-P

Product

Amplifier Built-in / U-shaped Micro Photoelectric Sensor

Details

Compact / Connector built-in type [T type]

Product Name

 Amplifier Built-in / U-shaped Micro Photoelectric Sensor [Compact / Connector built-in type] PM-65

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*Specifications and design of the products are subject to change without notice for the product improvement.

Spec Detail

Specifications and design of the products are subject to change without notice for the product improvement.
ItemSpecifications
Part NumberPM-T65-P
Product NumberPM-T65-P
Products NameAmplifier Built-in / U-shaped Micro Photoelectric Sensor
Product detailsCompact / Connector built-in type [T type]
Applicable regulations and certificationsCE Marking (EMC Directive, RoHS Directive), UKCA Marking (EMC Regulations, RoHS Regulations), UL/c-UL Listing Recognition certification
Sensing range6 mm 0.236 in (fixed)
Minimum sensing object0.8 × 1.2 mm 0.031 × 0.047 in opaque object
Hysteresis0.05 mm 0.002 in or less
Repeatability0.01 mm 0.0004 in or less
Supply voltage5 to 24 V DC ±10 % Ripple P-P 10 % or less
Current consumption15 mA or less
OutputPNP open-collector transistor
・Maximum source current: 50 mA
・Applied voltage: 30 V DC or less (between output and + V)
・Residual voltage: 2 V or less (at 50 mA source current), 1 V or less (at 16 mA source current)
Output:Output operationIncorporated with 2 outputs: Light-ON / Dark-ON
Output:Short-circuit protectionIncorporated
Response timeUnder light received condition: 20 μs or less
Under light interrupted condition: 80 μs or less
(Maximum response frequency: 3 kHz)(Note)
(Note) Refer to the note on the specification page for the response frequency.
Operation indicatorOrange LED (lights up under light received condition)
Pollution degree3
ProtectionIP40 (IEC)
Ambient temperature-25 to +55 ℃ -13 to +131 ℉ (No dew condensation or icing allowed), Storage: -30 to +80 ℃ -22 to +176 ℉
Ambient humidity5 to 85 % RH, Storage: 5 to 95 % RH
Ambient illuminanceFluorescent light: 1,000 ℓx at the light-receiving face
Voltage withstandability1,000 V AC for one min. between all supply terminals connected together and enclosure
Insulation resistance20 MΩ, or more, with 250 V DC megger between all supply terminals connected together and enclosure
Vibration resistance10 to 2,000 Hz frequency, 1.5 mm 0.059 in double amplitude (maximum acceleration 196 m/s2) in X, Y and Z directions for two hours each
Shock resistance15,000 m/s2 acceleration (1,500 G approx.) in X, Y and Z directions three times each
Emitting elementInfrared LED (Peak emission wavelength: 855 nm 0.034 mil, non-modulated)
MaterialEnclosure: PBT
Display section: Polycarbonate
Cable lengthExtension up to total 100 m 328.084 ft is possible with 0.3 mm2, or more, cable.
(Note) If the cable is extended to 20 m 65.617 ft or longer, confirm that the supply voltage at the end of the cable attached to the sensor is 4.5 V or higher.
WeightNet weight: 3 g approx.
Gross weight: 3 g approx.
RemarkWhere measurement conditions have not been specified precisely, the conditions used were an ambient temperature of +23 ℃ +73.4 ℉.

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